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| Име: |
ПЕТКО СТЕФЧОВ МАРИНОВ |
| Месторабота: |
Технически университет - Габрово |
| Длъжност (звание): |
Хоноруван преподавател, висше училище |
| Катедра: |
Електроника |
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| Съдържание:
Публикации (3)
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| Публикация: №1 | D. Dankov, P. Prodanov, P. Marinov. A Research on High Efficiency InnoSwitch3-EP GaN AC/DC Integrated Circuit. XXXII International Scientific Conference Electronics ET2023, September 13 - 15, 2023, Sozopol, Bulgaria DOI 10.1109/ET59121.2023.10279006, ISBN 979-835030200-4. | | Издателство: | 2023 32nd International Scientific Conference Electronics, ET 2023 - Proceedings | | Изд.год.: | 2023 | | Вид: | Научна публикация - Доклад от межд. конф. в Б-я | | Абстракт: | In this paper, application and research issues related to novel quasi-resonant AC/DC integrated circuit with GaN transistors are discussed. The results of the design and investigation of a laptop power supply device with an output power of 65W implemented with INN3679C-H60X of the InnoSwitch3-EP family are presented. The performance oscillograms of the GaN power transistor as well as the input, output and regulation characteristics of the power supply are presented. © 2023 IEEE. | | Пълен текст: | | |
| Публикация: №2 | D. Dankov, P. Prodanov, P. Marinov. Reliability analysis of pulse power supply with TopSwitch TOP249YN, IEEE 4th International Conference on Communications, Information, Electronic and Energy Systems, Plovdiv, Bulgaria / November 23 - 25, 2023, DOI 10.1109/CIEES58940.2023.10378766, ISBN 979-835033691-7. | | Издателство: | CIEES 2023 - IEEE International Conference on Communications, Information, Electronic and Energy Systems | | Изд.год.: | 2023 | | Вид: | Научна публикация - Доклад от межд. конф. в Б-я | | Абстракт: | The operational reliability of electronic products depends directly on good design and proper selection of the electronic components used. This paper presents a reliability analysis of some of the most used power integrated circuit-based sources. The most unreliable elements are identified and replaced to improve reliability. © 2023 IEEE. | | Пълен текст: | | |
| Публикация: №3 | Marinov P., D.Dankov, The recent evolution of GaN transistors and their applications, International Scientific Conference UNITECH 2023, 17 - 18 November 2023, Gabrovo , Bulgaria, ISSN 1313-230X. | | Издателство: | International Scientific Conference UNITECH 2023 | | Изд.год.: | 2023 | | Вид: | Научна публикация - Доклад от межд. конф. в Б-я | | Абстракт: | This paper focuses on recent advances in gallium nitride (GaN) transistors and their impact on improving energy efficiency in various applications. GaN technology has significantly improved the performance and reliability of electronic devices. In this paper, we review the major manufacturers, specifications, body options, and widespread applications of GaN transistors.
We also discuss a simulation study involving an induction hob in which the original IGBT transistors were replaced with GaN transistors, highlighting the potential benefits of GaN technology in practical scenarios.
In conclusion, this paper highlights the current use of GaN transistors and their role in the development of energy efficient technologies as demonstrated in the induction hob simulation. These developments highlight the significant contribution of GaN transistors in modern electronics.
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